Speaker
Description
Thin-film transistors (TFTs) are promising candidates for industrial and medical displays as well as in automotive and aerospace applications because they are cost-effective, low power consumption, high resolution and long lifespan [1]. In order to use it for space application, space radiation effects in TFTs must be evaluated. Therefore, there are many studies about radiation effects in TFTs based on IZO, ZnO, etc. [2-4]. SnO2-based TFT is attractive due to superior intrinsic electrical properties [5]. However, there was hardly research considering the radiation effects on SnO2-based TFT. In this study, we investigated the proton irradiation on the performance of SnO2-based TFT. The irradiated proton energy and fluence were 5 MeV and 1011 ~ 1011 cm-2, respectively. The threshold voltage of fabricated device was shift negatively by increasing proton fluences. We will analyze it to figure out the mechanism of this phenomenon.
Acknowledgments
This work was supported by the National Research Foundation of Korea(No. RS-2024-00432559, RS-2024-00437064) and the National Research Council of Science & Technology(NST) grant(No. CAP23031-200) by MSIT (Ministry of Science and ICT).
[1] Jenifer, K., et al., J. Electron. Mater. 49, 7098–7111 (2020)
[2] A. Indluru, et al., Thin Solid Films, 539, 342-344 (2013)
[3] R. Rasmidi, et al., Radiat. Phys. Chem. 184, 109455 (2021)
[4] D.-K. Kim, et al., Solid State Electronics, 215, 108884 (2024)
[5] C. Park, et al., Mater. Today. Commun., 37, 107064 (2023)
| Contribution track | ICABU WG4. Applications of Particle Beams |
|---|---|
| Paper submission Plan | Yes |
| Best Presentation | Yes |
